A Novel Super-junction MOSFET with Enhanced Switching Performance and Ruggedness

نویسندگان

چکیده

Abstract In this paper, a novel super-junction (SJ) MOSFET with enhanced switching performance and ruggedness is proposed investigated by the method of TCAD simulations. An N + /P - polysilicon junction gate electrode separation layer between P-base P-pillar are introduced to trench SJ-MOSFET. For gate, P located in bottom plays role insulating layer, which efficiently reduces charge (Q G ), thus increasing speed reducing loss. The does not contact so depletion region formed drain GD ) reduced. Besides, specific also inhibits activation parasitic bipolar transistor (BJT) improve unclamped inductive (UIS) capability. results simulation reveal that SJ-MOSFET better ruggedness.

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ژورنال

عنوان ژورنال: Journal of physics

سال: 2023

ISSN: ['0022-3700', '1747-3721', '0368-3508', '1747-3713']

DOI: https://doi.org/10.1088/1742-6596/2524/1/012028